Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-07-06

2008-12-30

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S745000

Reexamination Certificate

active

07470621

ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as a material of the resin BM in order to improve a contrast of brightness and a contrast of color. As a method for manufacturing a semiconductor device, a non-photosensitive black resin layer is formed over a substrate, a positive resist film is formed over the non-photosensitive black resin layer, the positive resist film is exposed, a resin black matrix layer made of the non-photosensitive black resin layer is formed over the substrate by developing the positive resist film by using a first developing solution and by etching the non-photosensitive black resin layer, a non-exposed positive resist film over the resin black matrix layer, which remains after the development, is exposed, and the positive resist film is removed by using a second developing solution.

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patent: 6127072 (2000-10-01), Shiba et al.
patent: 2004/0091820 (2004-05-01), Nagai et al.
patent: 08-078329 (1996-03-01), None
patent: 2000-294378 (2000-10-01), None
patent: 2004-172598 (2004-06-01), None

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