Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-06-21

2008-10-07

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S336000, C438S361000, C257SE29114

Reexamination Certificate

active

07432169

ABSTRACT:
An excessive etch in the conventional manufacturing process causes a roughened surface of a contact bottom, resulting in an increased variation in characteristics of semiconductor devices. A bipolar transistor having a collector region4provided in a bottom of a trench formed in a P-type silicon substrate1is formed. An interlayer insulating film23is formed on the P-type silicon substrate1. The interlayer insulating film23above the trench is partially etched to form a portion30of an opening for a collector contact. The interlayer insulating film23above the trench is partially etched until reaching the bottom thereof to form a residual section32of the opening for the collector contact. The residual section32of the opening for the collector contact is formed simultaneously with forming an opening25for an emitter contact and an opening27for a base contact.

REFERENCES:
patent: 2007/0145531 (2007-06-01), Sung
patent: 11-017040 (1999-01-01), None
patent: 11-265953 (1999-09-01), None

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