Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-04-17

2008-10-21

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S259000, C438S430000

Reexamination Certificate

active

07439156

ABSTRACT:
A semiconductor device and method of manufacturing the same. The method includes: forming a trench in a silicon substrate; forming a first insulating film on a surface of the silicon substrate, the surface including an interior wall of the trench; forming a polysilicon film which plugged in the trench and covered on an entire surface of the silicon substrate; forming a second insulating film with oxidizing a portion of the polysilicon film disposed outside of the trench, and oxidizing a surface region of the silicon substrate located beneath the first insulating film disposed outside of the trench and a surface region of the polysilicon film in the trench; and forming an embedded polysilicon layer by removing the second insulating film so that the surface of the silicon substrate is partially exposed and the polysilicon film partially remains in the trench.

REFERENCES:
patent: 7397082 (2008-07-01), Takemori et al.
patent: 6-314739 (1994-11-01), None

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