Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-09-12

2008-03-18

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S167000, C438S197000, C438S201000, C438S482000, C438S486000, C438S509000, C438S785000, 27, 27, 27, 27, 27

Reexamination Certificate

active

07344898

ABSTRACT:
After a bottom electrode film is formed, a ferroelectric film is formed on the bottom electrode film. Then, a heat treatment is performed for the ferroelectric film in an oxidizing atmosphere so as to crystallize the ferroelectric film. Then, a top electrode film is formed on the ferroelectric film. In the heat treatment (i.e., annealing for crystallization), a flow rate of oxidizing gas is set to be in a range of from 10 sccm to 100 sccm.

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