Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2008-04-01
2008-04-01
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S017000, C257SE21531
Reexamination Certificate
active
10936738
ABSTRACT:
In a manufacturing method for a semiconductor device, a main body wafer having an interlayer insulating film is formed, and a monitor wafer on which a monitor element is formed is provided. Characteristics of the main body wafer are copied onto the monitor element by simultaneously processing the main body wafer and the monitor wafer through BPSG densification during formation of the interlayer insulating film. The characteristic of the monitor element is measured by checking a process influence of the monitor element. Manufacturing conditions are set in accordance with the process influence of the monitor element. Variations in electric characteristics of the main body wafer are reduced in accordance with the set manufacturing conditions.
REFERENCES:
patent: 5139971 (1992-08-01), Giridhar et al.
patent: 5753556 (1998-05-01), Katada et al.
patent: 5907171 (1999-05-01), Santin et al.
patent: 5930584 (1999-07-01), Sun et al.
patent: 6065869 (2000-05-01), Lin et al.
patent: 6121156 (2000-09-01), Shamble et al.
patent: 6187632 (2001-02-01), Shuto et al.
patent: 6258613 (2001-07-01), Iwamatsu
patent: 6475846 (2002-11-01), Marotta et al.
patent: 6602725 (2003-08-01), Sakai et al.
patent: 6828162 (2004-12-01), Halliyal et al.
patent: 7026171 (2006-04-01), Chang et al.
patent: 2002/0107660 (2002-08-01), Nikoonahad et al.
patent: 2001351912 (2001-12-01), None
Ishii Kazutoshi
Kitajima Yuichiro
Minami Yukimasa
Osanai Jun
Uemura Keisuke
Adams & Wilks
Baumeister B. William
Fulk Steven J.
Seiko Instruments Inc.
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3932860