Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1999-05-27

2000-09-12

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438715, 438719, 438742, H01L 2100

Patent

active

06117792&

ABSTRACT:
A contact hole reaching a surface of a silicon substrate and a contact hole penetrating a resistor are formed on an interlayer insulation film by simultaneous etching. Then, a laminated film having a lower Ti layer and an upper TiN layer is formed as a substrate layer (barrier layer) of a wiring on the interlayer insulation film to bury the contact hole. Then, an annealing treatment is carried out at a temperature of 620.degree. C. Consequently, the laminated film buried in the contact hole penetrating the resistor and the resistor are caused to electrically come in contact with each other on a side face of the wiring (side contact).

REFERENCES:
patent: 5521113 (1996-05-01), Hsue et al.
patent: 5945350 (1999-08-01), Violette et al.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-95807