Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-10-02

2007-10-02

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S629000, C438S642000, C438S720000

Reexamination Certificate

active

11321628

ABSTRACT:
Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, a bit line contact region and a storage node contact region are simultaneously formed, and then a storage node contact hole is formed after a form of bit line to reduce a height of a finally formed storage node contact plug, thereby increasing a storage node open area and reducing a short circuit between the bit lines.

REFERENCES:
patent: 6074918 (2000-06-01), Lee
patent: 6569729 (2003-05-01), Wu et al.
patent: 6812572 (2004-11-01), Yang et al.

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