Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-05-01

2007-05-01

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S638000, C438S712000, C438S724000, C257SE21576, C257SE21579

Reexamination Certificate

active

11094578

ABSTRACT:
After an SiC film (4), an SiO2film (5) and a silicon nitride film (6) are formed sequentially on an organic low dielectric constant film (3), by performing O2plasma processing to a surface of the silicon nitride film (6), an oxide layer (7) is formed on the surface of the silicon nitride film (6). Then, a wiring trench pattern is formed on the silicon nitride film (6) and the oxide layer (7), and a resin layer (10) on which a via hole pattern is formed is formed. Subsequently, a portion of the oxide layer (7) exposed from the resin layer (10) is removed along with unnecessary particles.

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Patent Abstracts of Japan, Publication No. 2001044167 A, published on Feb. 16, 2001.
Patent Abstracts of Japan, Publication No. 03068141 A, published on Mar. 25, 1991.

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