Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-03-06

2007-03-06

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S694000, C438S697000, C257SE21002

Reexamination Certificate

active

11006187

ABSTRACT:
The disclosure relates to a method for manufacturing a semiconductor device by performing a planarization process including a first CMP process using a slurry including 0.05˜0.5 wt % CeO2 or MnO2 as an abrasive and a second CMP process using a slurry including SiO2 as the other abrasive regardless of order of the processes. The CMP process is performed using the first slurry having a high polishing speed in the middle of the wafer and the second slurry having a high polishing speed at the edge of the wafer, thereby decreasing the processing cost and securing the process margin to secure yield and reliability of devices

REFERENCES:
patent: 6540935 (2003-04-01), Lee et al.
patent: 6997788 (2006-02-01), Wu et al.
patent: 2002/0168857 (2002-11-01), Kobayashi
patent: 2005/0142988 (2005-06-01), Kim et al.
patent: 2000-068371 (2000-03-01), None
patent: 2002-0020796 (2002-03-01), None
patent: 1020020030138 (2002-04-01), None
patent: 1020020077636 (2002-10-01), None
Notice of Rejection in corresponding Korean Appl. No. 10-2004-0015467 dated Sep. 28, 2005.

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