Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-10-03

2006-10-03

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S253000, C438S706000, C134S001100

Reexamination Certificate

active

07115522

ABSTRACT:
A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum includes etching the conductive layer, and generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the plasma. The cleaning includes heating the substrate to a first temperature, introducing gas, which contains chlorine and nitrogen and in which a ratio of chlorine atoms to nitrogen atoms is 9:1 to 5:5, and applying high-frequency power to an electrode, on which the substrate is placed.

REFERENCES:
patent: 6573111 (2003-06-01), Nagano et al.
patent: 2002/0037647 (2002-03-01), Hwang et al.
patent: 2003/0100151 (2003-05-01), Okamoto
patent: 2004/0115928 (2004-06-01), Malhotra et al.
patent: 2002-537645 (2002-11-01), None

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