Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-06-27

2006-06-27

Le, Thien M. (Department: 2876)

Registers

Coded record sensors

Particular sensor structure

C235S492000

Reexamination Certificate

active

07066390

ABSTRACT:
A method for manufacturing a semiconductor device suppresses electric charge charged up in a semiconductor layer of an SOI substrate at the time of ion implantation, preventing a BOX layer and a gate oxide from being damaged. A field oxide film is formed on a semiconductor layer formed on a BOX layer. A conductive layer is formed on the field oxide film and a gate oxide film as well. The conductive layer made of amorphous carbon is formed by sputtering and has a thickness of 5 nm to 10 nm. B+ is implanted in the interface between the semiconductor layer and the gate oxide film by an intermediate dose ion implanter. The electric charge generated in the semiconductor layer at the time of ion implantation results in FN current, which is removed through the gate oxide film and the conductive layer.

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patent: 5789792 (1998-08-01), Tsutsumi
patent: 5946167 (1999-08-01), Hara et al.
patent: 6002383 (1999-12-01), Shimada
patent: 4-116975 (1992-04-01), None
patent: 52-127157 (1997-10-01), None

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