Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-11-14

2006-11-14

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S692000, C438S700000, C438S702000

Reexamination Certificate

active

07135380

ABSTRACT:
In a conventional method for manufacturing a semiconductor device, there are problems that a concave part is formed in a formation region of an isolation region, no flat surface is formed in the isolation region, and a wiring layer is disconnected above the concave part. In a method for manufacturing a semiconductor device of the present invention, when a silicon oxide film used for a STI method is removed, an HTO film covering an inner wall of a trench is partially removed to form a concave part in an isolation region. Thereafter, a TEOS film is deposited on an epitaxial layer including the concave part and is etched back. Accordingly, an insulating spacer is buried in the concave part. Thus, an upper surface of the isolation region becomes a substantially flat surface. Consequently, even if a wiring layer is formed above the concave part in the isolation region, disconnection thereof can be prevented. Moreover, in the isolation region, the substantially flat surface makes it possible to form a passive element such as a capacity element.

REFERENCES:
patent: 4454647 (1984-06-01), Joy et al.
patent: 5943578 (1999-08-01), Katakabe et al.
patent: 09-008119 (1997-01-01), None

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