Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1981-12-29
1983-10-04
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
148 15, 156643, 156649, 156653, 156657, 1566591, 204192D, 427 85, 427 93, 427 94, 427 95, 427 96, 427259, H01L 2176
Patent
active
044078510
ABSTRACT:
A method of forming a flat field region in a semiconductor substrate, which comprises forming a recess in the substrate, forming a covering on the whole surface of the substrate with a first insulating film such as plasma CVD SiO.sub.2 film which gives a layer at the side portion of the recess more rapidly etchable as compared with other portions, selectively removing the layer at the side portion to thereby form a V-shaped groove between the side of the recess and the first insulating film, and filling the V-shaped groove with a second insulating material so as to obtain a flat field region which is flush with the surface of an element-forming re
REFERENCES:
patent: 4305974 (1981-12-01), Abe
patent: 4321284 (1982-03-01), Yakushiji
patent: 4328263 (1982-05-01), Kurahashi
patent: 4333965 (1982-06-01), Chow
Adams et al., "Characterization of Plasma-Deposited Silicon Dioxide," J. Electrochem. Soc.: Solid-State Science and Technology, Jul. 1981, pp. 1545-1551.
Yokoyama et al., "Characterization of Plasma-Deposited Silicon Nitride Films", Journal Applied Physics, vol. 51, No. 10, Oct. 1981, pp. 5470-5474.
Dun et al., "Mechanisms of Plasma-Enhanced Silicon Nitride Deposition using SiH.sub.4 /N.sub.2 Mixture," J. Electrochem Society: Solid-State Science and Technology, Jul. 1981, pp. 1555-1563.
Keller et al., "Sputtering Process Model of Deposition Rate," IBM Journal Research Development, Vol. 21, No. 1, Jan. 1979, pp. 25-32.
Szendro et al., "Low Pressure Deposition of Silicon Nitride . . .", Tungsram, H-1340, Budapest, Hungary, vol. 128, No. 3.
Kurosawa Kei
Shibata Tadashi
Smith John D.
Tokyo Shibaura Denki Kabushiki Kaisha
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