Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-09-06

2005-09-06

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S406000, C438S424000, C438S975000

Reexamination Certificate

active

06939777

ABSTRACT:
An alignment mark section on a semiconductor substrate has two grooves which are filled with silicon oxide. The surface of the portion of the semiconductor substrate sandwiched by these grooves is lower than other portions of the semiconductor substrate to produce a step having a predetermined depth in the alignment mark section.

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