Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-05-03

2005-05-03

Thompson, Craig A. (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21550

Reexamination Certificate

active

06887767

ABSTRACT:
A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0≦x≦(d/2 sin θ), where x represents the distance, and θ represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.

REFERENCES:
patent: 6087243 (2000-07-01), Wang
patent: 6187648 (2001-02-01), Doi et al.
patent: 6242323 (2001-06-01), Ishitsuka et al.
patent: 1248346 (2000-03-01), None
patent: 11-233617 (1999-08-01), None
patent: 11-274287 (1999-10-01), None

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