Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1981-08-18

1983-10-25

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 94, 427 93, 427 88, 204192N, H01L 2128

Patent

active

044119291

ABSTRACT:
A method for manufacturing a semiconductor integrated circuit device having contact apertures with finely-controlled dimensions of 1 .mu.m or less. An ion bombardment layer is formed by bombarding predetermined portions of the substrate of the semiconductor device with nitrogen ions using a direct ion beam imaging technique. The ion bombardment layer is converted into an oxidation-resistant layer by annealing, and an insulating oxide layer is formed on the surface of the substrate in regions other than those on which the oxidation-resistant layer is formed by oxidation. Thereafter, contact recesses are formed upon removing the oxidation-resistant layer.

REFERENCES:
patent: 4016007 (1977-04-01), Wada et al.
patent: 4277320 (1981-07-01), Beguwala et al.

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