Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

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C438S462000, C438S508000, C438S508000

Reexamination Certificate

active

07316963

ABSTRACT:
Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, a device isolation film having a step difference occurring during a process of forming a device isolation film in a scribe lane region serves as a first alignment key, and a second alignment key formed during a process of forming a recess gate region is used in the subsequent process, thereby improving the process steps and product cost.

REFERENCES:
patent: 6218262 (2001-04-01), Kuroi et al.
patent: 2003/0119274 (2003-06-01), Weis

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