Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2008-01-08
2008-01-08
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S462000, C438S508000, C438S508000
Reexamination Certificate
active
07316963
ABSTRACT:
Disclosed herein is a method for manufacturing a semiconductor device. According to the present invention, a device isolation film having a step difference occurring during a process of forming a device isolation film in a scribe lane region serves as a first alignment key, and a second alignment key formed during a process of forming a recess gate region is used in the subsequent process, thereby improving the process steps and product cost.
REFERENCES:
patent: 6218262 (2001-04-01), Kuroi et al.
patent: 2003/0119274 (2003-06-01), Weis
Hynix / Semiconductor Inc.
Le Dung A.
Townsend & Townsend & Crew LLP
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