Method for manufacturing semiconductor components with short swi

Details Method for manufacturing semiconductor components with short swi Method for manufacturing semiconductor components with short swi

1993-10-07

1994-12-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 12, 148DIG23, H01L 2122

Patent

active

053710401

ABSTRACT:
A method is described for manufacturing semiconductor components with short switching time, having a weakly doped semiconductor area in contact with a PN junction. In order to obtain an inhomogeneous impurity distribution in the axial direction of the semiconductor array, the following process steps are implemented:
a) gold impurities are placed in the semiconductor array and homogeneously distributed there in a first diffusion process,
b) a layer comprising a 3d transition metal affecting the charge carrier lifetime is deposited onto that surface side of the semiconductor array having a shorter distance from the weakly doped semiconductor area,
c) the 3d transition metal is incorporated into the semiconductor array by a second diffusion process and is inhomogeneously distributed there, such that an impurity surplus is generated in a partial area of the weakly doped semiconductor area in the vicinity of the PN junction.

REFERENCES:
patent: 4009484 (1977-02-01), Ogiue et al.
patent: 4963509 (1990-10-01), Yoshizawa et al.
Usami, Akira et al.: Spectral Responses of GaAs Photodiodes Fabricated by Rapid Thermal Diffusion. In: IEEE Electron Device Letters, vol. 13, No. 1, Jan., 1992 pp. 59-60.
Seidel, T. E.; et. al.: Rapid Thermal annealing of dopants implanted into preamorphized silicon, In: J. Appl. Phys. 58 (2), Jul. 15th, 1985, pp. 683-687.
Schlangenotto, Heinrich et al.: Halbleiter-Leistungs-bauelemente: Untersuchungen zur Physik und Technologie. In: Wiss. Ber. AEG Telefunken, 55, 1982, 1-2, pp. 7-24.
Crowder, B. L. et al.: Silicon Schottky Barrier Bistable Memory Element. In: IBM Technical Disclosure Bulletin, vol. 15, No. 3, Aug. 1972, p. 891.

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