Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices
Reexamination Certificate
2011-06-21
2011-06-21
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Making plural separate devices
C438S114000, C438S463000, C257SE21499
Reexamination Certificate
active
07964449
ABSTRACT:
In a laser processing step S3, boundary sections among semiconductor elements2of a resist film4are exposed to a laser beam13a, to thus form in the resist film4boundary grooves5—which partition the semiconductor elements2from each other—and to uncover a surface1bof a semiconductor wafer1in the boundary grooves5. In a plasma etching step S6, the surface1bof the semiconductor wafer1exposed in the boundary grooves5is etched by means of plasma Pf of a fluorine-based gas, to thus separate the semiconductor wafer1into individual semiconductor chips1′ along the boundary grooves5. Between the laser processing step S3and the plasma etching step S6, there is performed processing pertaining to a boundary-groove-surface smoothing step S5for smoothing, by means of plasma Po of oxygen gas, surfaces of the boundary grooves5having assumed an irregular shape in the laser processing step S3.
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International Search Report for PCT/JP2007/066960.
Arita Kiyoshi
Haji Hiroshi
Nguyen Khiem D
Panasonic Corporation
Pearne & Gordon LLP
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