Semiconductor device manufacturing: process – Making regenerative-type switching device
Reexamination Certificate
2011-05-17
2011-05-17
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Making regenerative-type switching device
C438S135000, C257SE21499, C257SE21513
Reexamination Certificate
active
07943439
ABSTRACT:
A manufacturing method is provided for manufacturing a semiconductor apparatus including a main semiconductor device and a subsidiary semiconductor device, which facilitates preventing characteristics variations from causing and reducing the manufacturing costs. The method includes forming p-type well region in the surface portion of single-crystal semiconductor substrate of a main semiconductor device, mounting a single-crystal silicon diode above p-type well region with an insulator film interposed between diode and p-type well region for forming subsidiary semiconductor device, forming an insulator film on the main semiconductor device such that single-crystal silicon diode is covered with insulator film for fixing single-crystal silicon diode to single-crystal semiconductor substrate, and forming a metal film on the main semiconductor device for further forming a cathode side wiring on n-type cathode region in single-crystal silicon diode and an anode side wiring on p-type anode region in single-crystal silicon diode.
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Everhart Caridad M
Fuji Electric Systems Co., Ltd.
Rossi Kimms & McDowell LLP
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