Method for manufacturing self-alignment type bipolar transistor

Details Method for manufacturing self-alignment type bipolar transistor Method for manufacturing self-alignment type bipolar transistor

1998-05-22

2000-06-27

Bowers, Charles

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Using epitaxial lateral overgrowth

438357, H01L 21331

Patent

active

060806311

ABSTRACT:
In a method for manufacturing a bipolar transistor, a semiconductor layer having a collector region of a first conductivity type is formed, and an epitaxial semiconductor layer of a second conductivity type is grown on the semiconductor layer. Then, impurities are thermally diffused from the epitaxial semiconductor layer into the semiconductor layer. Thus, a base region is formed by the epitaxial semiconductor layer and a part of the semiconductor layer.

REFERENCES:
patent: 5420454 (1995-05-01), Vook et al.
patent: 5877540 (1999-03-01), Naruse et al.

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