Coating processes – Electrical product produced – Condenser or capacitor
Patent
1982-07-28
1984-10-09
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
148 15, 148187, 29576B, 427 89, 427 90, 427 93, 427 94, H01L 2124
Patent
active
044761570
ABSTRACT:
Disclosed is a method for manufacturing a Schottky barrier diode. An insulating film is formed on a silicon substrate of one conductivity type. The insulating film has a hole therein partially exposing the surface of the silicon substrate. Then, a polycrystalline silicon layer is formed to cover that portion of the insulating film which surrounds the contact hole, the inner wall of the contact hole, and the exposed surface portion of the silicon substrate. Thereafter, a metal layer is deposited to cover at least the polycrystalline silicon layer. The polycrystalline silicon is then alloyed with the metal to form a metal silicide layer.
REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4313971 (1982-02-01), Wheatley
patent: 4364166 (1982-12-01), Crowder
patent: 4375999 (1983-03-01), Nawata
Gniewek et al., "Enhancement of Pt Adhesion Using a Silicon Underlay" IBM TDB, vol. 20, No. 3, p. 1009, Aug. 1977.
Rideout, "Reducing the Sheet Resistance of Polysilicon Lines in Integrated Circuits", IBM TDB, vol. 17, No. 6, pp. 1831-1832, Nov. 1974.
Sullivan, "Evaporated Metal Schottky Barrier Diode" IBM TDB, vol. 21, No. 7, p. 2816, Dec. 1978.
Smith John D.
Tokyo Shibaura Denki Kabushiki Kaisha
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