Method for manufacturing rod-shaped silicon structures

Details Method for manufacturing rod-shaped silicon structures Method for manufacturing rod-shaped silicon structures

1994-04-04

1995-09-12

Rosenbaum, Mark

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, 156657, H01J 902, H01J 130

Patent

active

054493102

ABSTRACT:
Rod-shaped or cylindrical structures in the nm range on a substrate of silicon are manufactured. A first cylinder of silicon is selectively epitaxially deposited in the hole of a mask layer of oxide, and the mask layer is removed. The silicon is then oxidized to form an oxide layer having such a thickness that a thinner, second cylinder of silicon having practically the same height as the first cylinder remains. In a last step, this oxide layer is removed, so that the second cylinder forms a freestanding silicon rod on the surface of the substrate.

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K. K. Chin et al., "Field Emitter Tips for Vacuum Microelectronic Devices", 8257a Journal of Vacuum Science & Technology A vol. 8, No. 4, Jul./Aug., 1990, pp. 3586-3590.
D. Liu et al., "Fabrication of wedge-shaped silicon filed emitters with nm-scale radii", Appl. Phys. Lett. 58 (10), Mar. 11, 1991, pp. 1042-1043.
T. Utsumi, "Keynote Address Vacuum Microelectronics: What's New and Exciting", IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991, pp. 2276-2283.

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