Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-07-19
2011-07-19
Sarkar, Asok (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21218, C257SE21222, C438S707000, C438S712000
Reexamination Certificate
active
07981805
ABSTRACT:
The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O2, O3, N2, H2O, N2O, NO2, CO and CO2to at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.
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International Search Report and Written Opinion, and International Preliminary Report on Patentability issued in International Application No. PCT/JP2009/053156 (15 pages).
Kodaira Yoshimitsu
Osada Tomoaki
Shinde Sanjay
Canon Anelva Corporation
Fitzpatrick ,Cella, Harper & Scinto
Sarkar Asok
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