Method for manufacturing resistance change element

Details Method for manufacturing resistance change element Method for manufacturing resistance change element

2011-07-19

2011-07-19

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21218, C257SE21222, C438S707000, C438S712000

Reexamination Certificate

active

07981805

ABSTRACT:
The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O2, O3, N2, H2O, N2O, NO2, CO and CO2to at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.

REFERENCES:
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patent: 2005/0016957 (2005-01-01), Kodaira et al.
patent: 2003-282844 (2003-10-01), None
patent: 2005-314791 (2005-11-01), None
patent: WO 2007/108462 (2007-09-01), None
International Search Report and Written Opinion, and International Preliminary Report on Patentability issued in International Application No. PCT/JP2009/053156 (15 pages).

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