Method for manufacturing reservoir capacitor of...

Details Method for manufacturing reservoir capacitor of... Method for manufacturing reservoir capacitor of...

2009-06-21

2010-11-23

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S155000, C438S197000, C257S288000, C257S295000, C257S298000, C257SE21009, C257SE21664

Reexamination Certificate

active

07838385

ABSTRACT:
A method for manufacturing a reservoir capacitor of a semiconductor device reduces the resistance of the reservoir capacitor to secure reliability of the semiconductor device. The method comprises: forming a dummy pattern having a lattice structure over a transistor; forming a first interlayer insulating film over the resulting structure including the dummy pattern; etching the first interlayer insulating film to form a line-structured storage node contact region between the lattice structures; and filling a conductive layer in the line-structured storage node contact region to form a line-structured storage node contact.

REFERENCES:
patent: 7446361 (2008-11-01), Maruyama
patent: 2006/0249768 (2006-11-01), Izumi
patent: 2007/0122970 (2007-05-01), Kim et al.

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