Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
1998-08-21
2001-06-05
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S094000, C438S701000, C438S962000
Reexamination Certificate
active
06242275
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to a method for manufacturing quantum wires. More particularly, this invention relates to the method for manufacturing quantum wires in which when a stacked structure having alternative layers of AlAs and GaAs is formed, the V-grooves are formed beside the GaAs layers and the quantum wires are formed using the V-grooves.
2. Description of the Related Art
The technology of the thin film growing and the microscopic device manufacturing is going into the quantum concept beyond the classical analysis realm. One of such devices is a semiconductor laser diode which uses the quantum well effect and it is used as a powerful laser device in its efficiency and output. As expected and embodied in the theoretical calculation and research step of the laboratory level, the embodiment of the device using quantum wires and quantum dots shows the characteristic of the device having a higher efficiency in comparison with the quantum well device. However, the manufacturing technology of quantum wires and quantum dots has been in the low level until now.
The quantum wires are manufactured using the patterns under the sub micrometer, which are formed by the ion beam or the electron beam lithography method. Thus, the quantum wires are manufactured by forming the quantum well and then producing the pattern through the electron beam lithography method and using the re-growth method, or by forming the insulator mask through the electron beam lithography method and then using the selective growth method. Also, the quantum wires are manufactured in the V-groove formed by producing the pattern through electron beam and photo lithography and by using the chemical etch.
However, in the methods described above, the efficiency of quantum is reduced due to the limitation of electron beam size and the defects occurring in the lithography process.
SUMMARY OF THE INVENTION
The object of the present invention is to manufacture fine quantum wires of several nm using the natural properties of matter to acquire the cheap price and little defect.
The method for manufacturing quantum wires according to the invention includes the steps of growing a GaAs buffer layer on the (
011
) plane of a GaAs single crystal substrate; growing an AlAs layer to use as a mask, and growing a GaAs layer for a V-grooves alternatively on the GaAs buffer layer so that each GaAs layer is stacked between one AlAs layer and an adjacent AlAs layer; growing the cover layer of GaAs on the AlAs layer which is the top layer of the structure; cutting the entire structure including the GaAs cover layer to the perpendicular orientation of (
011
), whose structure is in the orientation of (
011
) entirely, so as to expose the facet (
100
); performing a heat treatment the entire structure cut to expose the facet (
100
) and forming oxide film on the exposed portion of each AlAs layer; etching each exposed GaAs layer chemically using the oxide film on AlAs layers as a mask and forming V-groove so that the facet (
111
) of GaAs layer is exposed; and growing the quantum wire in the V-groove.
The above and further objects, aspects and novel features of the invention will become more apparent from the following detailed description when read in connection with the accompanying drawings.
REFERENCES:
patent: 5138625 (1992-08-01), Paoli et al.
patent: 5372675 (1994-12-01), Wakabayahi
patent: 5577062 (1996-11-01), Takahashi
patent: 5663592 (1997-09-01), Miyazawa
patent: 6011271 (2000-01-01), Sakuma
Kim Sung Bock
Lee El Hang
Ro Jeong Rae
Cohen & Pontani, Lieberman & Pavane
Electronics and Telecommunications Research Institute
Goodwin David
Wilczewski Mary
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