Method for manufacturing programmable read-only memory containin

Details Method for manufacturing programmable read-only memory containin Method for manufacturing programmable read-only memory containin

1985-07-19

1987-09-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 61, H01L 21265, H01L 2972, H01L 21225

Patent

active

046945660

ABSTRACT:
A semiconductor PROM containing a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22) fully adjoining a recessed oxide insulating region (16) is fabricated by a process in which the insulating region serves as a mask to control the lateral extents of the dopants utilized to define the diodes. The intermediate cell regions are ion implanted to obtain maximum dopant concentration near their mid-points. This facilitates programming operation.

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"16-K PROM Uses Vertical Fuses", in Electronics, Feb. 24, 1982, p. 184.
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M. Grossman, "Recessed-Oxide Isolation Hikes IBM's LSI Density and Speed", Electronic Design, 7 Jun. 1979, pp. 26-28.

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