Method for manufacturing probe structure

Details Method for manufacturing probe structure Method for manufacturing probe structure

2007-07-25

2010-11-02

Tran, Binh X (Department: 1713)

Etching a substrate: processes

Forming or treating an article whose final configuration has...

C216S002000, C216S041000, C216S079000, C438S705000

Reexamination Certificate

active

07824561

ABSTRACT:
A method for manufacturing a probe structure is disclosed. In accordance with the method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.

REFERENCES:
patent: 3597667 (1971-08-01), Horn
patent: 6059982 (2000-05-01), Palagonia et al.
patent: 6784071 (2004-08-01), Chen et al.
patent: 2005/0051515 (2005-03-01), Nam
patent: 2007/0293053 (2007-12-01), Kim et al.

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