Method for manufacturing pressure sensor

Details Method for manufacturing pressure sensor Method for manufacturing pressure sensor

2007-09-11

2007-09-11

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S051000, C438S053000, C438S054000, C438S055000

Reexamination Certificate

active

11325514

ABSTRACT:
A method for manufacturing a pressure sensor includes the steps of: preparing a semiconductor substrate; forming an insulation film on the substrate; forming a first metal film on the insulation film; forming a first protection film on the first metal film and the insulation film; forming a second protection film on the first metal film and the first protection film; performing reduction treatment of adhesive force on the second protection film, the force between the second protection film and a second metal film; forming the second metal film on the first metal film and the first protection film; and removing a part of the second metal film.

REFERENCES:
patent: 5595939 (1997-01-01), Otake et al.
patent: 6747339 (2004-06-01), Mukai et al.
patent: 2005/0034526 (2005-02-01), Shinyama et al.
U.S. Appl. No. 11/180,528, filed Jul. 14, 2005, Tanaka et al.

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