Method for manufacturing power switching devices

Details Method for manufacturing power switching devices Method for manufacturing power switching devices

1980-12-04

1983-01-25

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148189, H01L 21225

Patent

active

043701809

ABSTRACT:
A method for manufacturing power switching devices such as thyristors and power transistors comprising the steps of forming impurity diffused layers of one conductivity type and of the opposite conductivity type in a semiconductor substrate of one conductivity type; forming a film containing phosphorus on the substrate; diffusing lifetime killer atoms into the substrate; and forming electrodes on the substrate.

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patent: 4043837 (1977-08-01), Cresswell et al.
patent: 4061510 (1977-12-01), Kennedy et al.
patent: 4137099 (1979-01-01), Sun
patent: 4156963 (1979-06-01), Tsuj et al.
Azuma et al., "High Power Gate Turn-Off Thyristors", Jpn. J. of Appl. Physics, vol. 17, (1978), Suppl. 17-1, pp. 275-281.
Azuma et al., "2500 V, 600 A Gate Turn-Off Thyristor (GTO)", International Electron Devices Meeting, Wn., D.C., Dec. 3-5, 1979, pp. 246-249.

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