Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2006-08-15
2006-08-15
Alanko, Anita (Department: 1765)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C216S049000, C216S056000, C521S061000
Reexamination Certificate
active
07090784
ABSTRACT:
A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc-No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
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Akasaka Yoshihiro
Asakawa Koji
Hiraoka Toshiro
Hotta Yasuyuki
Alanko Anita
Kabushiki Kaisha Toshiba
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