Fishing – trapping – and vermin destroying
Patent
1994-01-06
1995-06-27
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437 71, 437129, 437132, 437174, 437173, 437248, H01L 2120
Patent
active
054279771
ABSTRACT:
An Si or SiC semiconductor layer is subjected to anodic oxidation in an HF solution to form a porous semiconductor layer. Without drying, the porous semiconductor layer is then immersed in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.
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Collins George J.
Nakano Moto'o
Takazawa Akira
Tamura Tetsuro
Yamada Masao
Breneman R. Bruce
Fujitsu Limited
Paladugu Ramamohan Rao
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