Method for manufacturing piezoelectric resonator element

Metal working – Piezoelectric device making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C029S594000, C029S896220, C310S312000, C310S370000, C430S314000, C216S041000, C216S057000

Reexamination Certificate

active

07861387

ABSTRACT:
A method for manufacturing a piezoelectric resonator element from a substrate made of piezoelectric material is provided. The method includes forming a first dry etching mask in a first masking region of a first surface of the substrate in a first mask forming process and performing a first dry etching process to remove a portion of the substrate in areas between the first dry etching mask after the first mask forming process. The method further includes maintaining a first un-etched portion of the substrate between the first dry etching mask after the first dry etching process and removing the first dry etching mask in a mask removing process after the first dry etching process. A wet etching process is performed to remove the first un-etched portion of the substrate after the mask removing process, thereby forming the piezoelectric resonator element.

REFERENCES:
patent: 5695896 (1997-12-01), Pierrat
patent: 6496085 (2002-12-01), Ella et al.
patent: 6661162 (2003-12-01), Nagai et al.
patent: 6719914 (2004-04-01), Nakatani et al.
patent: 2003/0071542 (2003-04-01), Satoh et al.
patent: 1 523 096 (2005-04-01), None
patent: 57-166399 (1982-10-01), None
patent: 08-111623 (1996-04-01), None
patent: 08-242134 (1996-09-01), None
patent: 09-083281 (1997-03-01), None
patent: 2002-374146 (2002-12-01), None
patent: 2003-198303 (2003-07-01), None
patent: 2005-130218 (2005-05-01), None
patent: 2006-121411 (2006-05-01), None
patent: 2007281657 (2007-10-01), None
Saravanan et al; “Surface Micromachined Fabrication of Piezoelectric AIN Unimorph Suspension Devices for RF Resonator Applications”; 13thInternational Conference on Solid State Sensors, Actuators and Microsystems; Jun. 2005; pp. 1362-1365.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing piezoelectric resonator element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing piezoelectric resonator element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing piezoelectric resonator element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2711255

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.