Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-12-20
2011-10-18
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C257SE21231
Reexamination Certificate
active
08039396
ABSTRACT:
Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon substrate; forming a plurality of fine holes in the etching-resistant film with an irradiated laser beam which has a focal depth adjusted to 10 μm or more to expose a surface of the silicon substrate which is a base layer; and etching the exposed surface of the silicon substrate, in which the step of exposing the surface of the silicon substrate includes forming a fine recess at a concentric position to each of the fine holes in the surface of the silicon substrate which lies under the etching-resistant film.
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Office Action issued Dec. 16, 2010, in Japanese Patent Application No. 2009-525263, filed Jul. 9, 2009.
Matsuno Shigeru
Nishimura Kunihiko
Dickey Thomas L
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Yushin Nikolay
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