Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1988-11-03
1990-09-18
Dees, Jose
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430296, 156643, G03F 100
Patent
active
049578340
ABSTRACT:
In manufacturing a photomask, a molybdenum silicide film is formed on the main surface of a quartz substrate. A resist film having a pattern is, then, formed on the molybdenum silicide film. Thereafter, the molybdenum silicide film is etched using the resist film as a mask. The etching is effected in a plasma generated in a mixed gas containing nitrogen gas in CF.sub.4 gas.
REFERENCES:
patent: 4411734 (1983-10-01), Maa
Matsuda Shuichi
Watakabe Yaichiro
Dees Jose
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Method for manufacturing photomask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing photomask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing photomask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1572193