Method for manufacturing photoelectric conversion element

Details Method for manufacturing photoelectric conversion element Method for manufacturing photoelectric conversion element

1996-09-23

1999-04-27

Nguyen, Nam

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 62, 438 96, 438484, 438485, 136258, H01L 31075

Patent

active

058973320

ABSTRACT:
A method for manufacturing a photoelectric conversion element containing at least one pin junction, wherein a diffusion preventing layer is provided between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, and the diffusion preventing layer is deposited such that deposition temperature differs in its thickness direction.

REFERENCES:
patent: 4400409 (1983-08-01), Tzu et al.
patent: 4696881 (1987-09-01), Saitoh et al.
patent: 4728370 (1988-03-01), Ishii et al.
patent: 5256576 (1993-10-01), Guha et al.
patent: 5324364 (1994-06-01), Matsuda et al.
patent: 5571749 (1996-11-01), Matsuda et al.

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