Method for manufacturing photodetector for weak light

Details Method for manufacturing photodetector for weak light Method for manufacturing photodetector for weak light

2007-02-13

2007-02-13

Epps, Georgia (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S2140AG

Reexamination Certificate

active

10883989

ABSTRACT:
This invention provides a method for manufacturing a circuit for photon number counting without destroying a FET within the circuit by manufacturing a photodetector for weak light, the photodetector for weak light comprising a circuit on a substrate, the circuit comprising light detection means and a field effect transistor (FET), the method comprising: a light detection means connection step; an FET electrode-to-substrate electrode connection step; an external electrode connection step, a light detection means-to-gate connection step.

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Aaron J. Miller et al.; Applied Physics Letters, vol. 83, No. 4, pp. 791-793, Jul. 28, 2003. Discussed in the specification.
Japanese Office Action dated Oct. 18, 2006 (mailing date), issued in corresponding Japanese Patent Application No. 2003-272456.

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