Method for manufacturing photoconductive layer constituting...

Details Method for manufacturing photoconductive layer constituting... Method for manufacturing photoconductive layer constituting...

2008-09-30

2008-09-30

Kunemund, Robert M. (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C428S702000, C428S701000, C250S582000

Reexamination Certificate

active

11087650

ABSTRACT:
A photoconductive layer formed of a Bi12MO20sintered body is manufactured without being fused with a setter. An oxide material in which a content of silicon oxide is 1 wt %, and more preferably, 0.3 wt % or less, is used as a setter which mounts a Bi12MO20molded body (where M is at least one of Ge, Si and Ti) thereon.

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English Translation for JP 2000-249769 (already cited in IDS).
English Translation for JP 11-237478 (already cited in IDS).

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