Method for manufacturing P type semiconductor device employing d

Details Method for manufacturing P type semiconductor device employing d Method for manufacturing P type semiconductor device employing d

1988-11-01

1991-02-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 44, 437141, 437149, 437150, 437152, 437153, 437154, 437160, 437168, 437162, H01L 21223, H01L 21225, H01L 21383, H01L 21385

Patent

active

049961683

ABSTRACT:
An improved method for manufacturing P type semiconductor device such as used for memories is disclosed. Channeling such as caused by an ion implantation process is prevented by adopting a diffusion method to diffuse boron (7) from a boron glass formed on a layer of polysilicon or silicon oxide on a semiconductor substrate. This method provides a semiconductor device with shallow P type impurity diffusion regions.

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