Method for manufacturing p type gallium nitride based device

Details Method for manufacturing p type gallium nitride based device Method for manufacturing p type gallium nitride based device

2011-06-21

2011-06-21

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Dopant introduction into semiconductor region

C438S046000, C257SE33025

Reexamination Certificate

active

07964425

ABSTRACT:
A method for manufacturing a p-type gallium nitride-based (GaN) device is disclosed. In accordance with the method, an Mg in an MgNxlayer disposed on p-type gallium nitride is diffused into the p-type gallium nitride by a heat treatment to dope the p-type gallium nitride with the Mg while activating the diffused Mg simultaneously, eliminating a need for an additional heat treatment for the activation and preventing a nitrogen in the p-type gallium nitride from being separated therefrom.

REFERENCES:
patent: 7345323 (2008-03-01), Goetz et al.
patent: 7439609 (2008-10-01), Negley
patent: 2005/0167693 (2005-08-01), Goetz et al.
patent: 2005/0211999 (2005-09-01), Negley
patent: 2005/0224781 (2005-10-01), Kneissl et al.

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