Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-05-03
1993-05-18
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505732, 505730, 505742, 427596, 427 62, 427314, B05D 306, B05D 512
Patent
active
052121488
ABSTRACT:
A method of manufacturing a layer of a superconducting high-T.sub.c -material. For this purpose, an appropriate target material is deposited on a predetermined substrate by a pulsed laser with a wavelength in the ultraviolet range and, by applying a heat treatment and an oxygen treatment, the desired superconducting metal-oxide phase is formed with an ordered crystal structure. The heat treatment and oxygen treatment are performed simultaneously during the vaporizing step, whereby a power density of the laser radiation of over 3 J/cm.sup.2 at the target material is provided, the pulse power of the laser is at least 1.5 J/pulse, the temperature of the substrate is raised to 600.degree. C. to 800.degree. C., and an oxygen atmosphere of between 0.02 mbar and 1 mbar is provided.
REFERENCES:
Wu et al., "Low-temperature preparation of high Tc superconducting thin films", Appl. Phys. Lett. 52(9) Feb. 1988, pp. 754-756.
Appl. Phys. Lett., vol. 51, No. 26, 28, Dec. 1987, pp. 2263-2265.
Appl. Phys. Lett., vol. 51, No. 22, 30, Nov. 1987, pp. 1845-1847.
Appl. Phys. Lett., vol. 51, No. 11, Sep. 14, 1987, pp. 861-863.
Europhys. Lett., vol. 3, No. 12, Jun. 15, 1987, pp. 1301-1307.
Appl. Phys. Lett., vol. 51, No. 8, Aug. 24, 1987, pp. 619-621.
Supercond. News, vol. 1, No. 9, Mar. 18, 1988, pp. 1-5 and 13-16.
SPIE, vol. 735, Pulse Power for Lasers (1987), pp. 50-54.
Endres Gerhard
Roas Bernhard
Schultz Ludwig
Beck Shrive
King Roy V.
Siemens Aktiengesellschaft
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