Method for manufacturing organic light-emitting diodes

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07048603

ABSTRACT:
A method for manufacturing organic light-emitting diodes (OLEDs) is disclosed, by adding nitrogen (N2) into the material of a hole transport layer (HTL) and evaporating the nitrogen and the material of the hole transport layer while growing the hole transport layer, so as to dope nitrogen molecules into the hole transport layer. In the hole transport layer, the nitrogen molecules are impurities of higher energy level, and are used to catch holes while the holes transports and trap the holes in the hole transport layer, thereby obtaining an object of improving the luminance efficiency of the organic light-emitting diodes with lower cost.

REFERENCES:
patent: 5874803 (1999-02-01), Garbuzov et al.
patent: 5998803 (1999-12-01), Forrest et al.
patent: 6402579 (2002-06-01), Pichler et al.
patent: 2001/0002279 (2001-05-01), Forrest et al.
patent: 2002/0070385 (2002-06-01), Yamagata
patent: 2002/0098378 (2002-07-01), Kim et al.
patent: 2002/0157596 (2002-10-01), Stockman et al.
patent: 2002/0160553 (2002-10-01), Yamanaka et al.
patent: 2003/0018097 (2003-01-01), O'Neill et al.
patent: 2003/0030059 (2003-02-01), Shi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing organic light-emitting diodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing organic light-emitting diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing organic light-emitting diodes will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3620079

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.