Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including passive device
Patent
1997-10-17
1999-09-14
Bowers, Charles
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including passive device
438 93, 438 94, 438312, 438314, 385 14, H01L 2170
Patent
active
059536179
ABSTRACT:
A method for manufacturing an optoelectronic integrated circuit including a photo diode for transforming light into electric signals, an HBT for amplifying said electric signals from said photo diode, a capacitor, and a resistor is disclosed. An HBT including an emitter, a base, and a collector on a predetermined location of a semiconductor substrate, and a photo diode including an N type metal, non doped layer, and a P type metal are formed. A lower electrode of a capacitor is formed on the semiconductor substrate located in a place separated by a predetermined space from said photo diode. A SiN film is deposited over the surface of the resulting structure of the semiconductor substrate. The above described SiN film is patterned to exist only on the surfaces of the HBT, photo diode, lower electrode, and semiconductor substrate separated from the lower electrode by a predetermined space. Furthermore, a resistor is formed on the SiN film existing on a predetermined surface of the semiconductor substrate.
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Bowers Charles
Christianson Keith
Hyundai Electronics Industries Co,. Ltd.
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