Method for manufacturing of integrated DFB laser with coupled st

Coherent light generators – Particular active media – Semiconductor

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29569L, 29576E, 29580, 148175, 156649, 156652, 156655, 156662, 357 17, 357 30, 357 56, 357 91, H01S 319, H01L 2100, H01L 21306, B44C 122

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046566368

ABSTRACT:
A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.

REFERENCES:
patent: 4178604 (1979-12-01), Nakamura et al.
patent: 4257011 (1981-03-01), Nakamura et al.
patent: 4575919 (1986-03-01), Logan
"A Frequency-Multiplexing Light Source with Monolithically Integrated Distributed-Feedback Diode Laser," Aiki et al, IEEE Journal of Quantum Electronics, vol. QE-13, No. 4, Apr. 1977.

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