Method for manufacturing non-volatile memory

Details Method for manufacturing non-volatile memory Method for manufacturing non-volatile memory

2005-05-17

2005-05-17

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Making oxide-nitride-oxide device

C438S258000

Reexamination Certificate

active

06893988

ABSTRACT:
To manufacture a non-volatile memory, an oxide film is deposited on a substrate, a flash device area and a logic gate area are removed and a tunnel oxide layer is stacked on an opened surface of the substrate. A first polysilicon is stacked over the resultant structure, a polish is carried out and the oxide film is removed. An LDD is formed in an upper portion of the substrate excepting an area occupied by the tunnel oxide layer, a sidewall is deposited on a side of the first polysilicon, a drain and a source are generated beneath the LDD excepting an area contacted to the sidewall and a TEOS is stacked on the resultant structure excepting the flash device area. An ONO layer is deposited over the resultant structure, a second polysilicon is stacked over the ONO layer, a polish is carried out and the TEOS is removed.

REFERENCES:
patent: 6605511 (2003-08-01), Pham et al.
patent: 20030049905 (2003-03-01), Nitta et al.

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