Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1994-03-03
1995-09-19
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117108, 117200, 117204, C30B 2306
Patent
active
054508134
ABSTRACT:
Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film manufacturing method according to the present invention is characterized by the use of osmium as a catalyst to activate nitrogen molecules. The growth device according to the present invention has a construction wherein a nitrogen gas introducing pipe for blowing a nitrogen gas against a semiconductor substrate is disposed in a reaction chamber for growing the group II-VI compound semiconductor thin film by the MOVPE process and the osmium is disposed between the semiconductor substrate and the nitrogen gas introducing pipe.
REFERENCES:
patent: 4038174 (1977-07-01), Myers
Nagao Yasuyuki
Nishimura Kohsuke
Sakai Kazuo
Breneman R. Bruce
Garrett Felisa
Kokusain Denshin Denwa Kabushiki Kaisha
Lobato Emmanuel J.
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