Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2005-07-20
2008-10-28
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Chemical etching
C438S738000, C438S940000, C438S662000, C257SE21347, C257SE21475, C257SE21591, C257SE21305, C156S922000
Reexamination Certificate
active
07442644
ABSTRACT:
To remove the disparate substrate from nitride semiconductor layer grown over the disparate substrate, that is made of a material different from nitride semiconductor, by irradiating the disparate substrate with laser beam having a wavelength shorter than the band gap wavelength of the nitride semiconductor layer, while supplying an acidic or alkaline etching solution to the interface between the disparate substrate and the nitride semiconductor layer.
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Birch, Stewart, Kolasch and Birch LLP
Nguyen Ha Tran T
Nichia Corporation
Tillie Chakila
LandOfFree
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