Method for manufacturing nitride semiconductor laser element

Details Method for manufacturing nitride semiconductor laser element Method for manufacturing nitride semiconductor laser element

2009-04-28

2011-11-08

Stark, Jarrett (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S039000, C438S040000, C438S043000, C257S627000, C257S623000, C257SE33003

Reexamination Certificate

active

08053262

ABSTRACT:
A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on the nitride semiconductor layer, and a protruding part where part of the substrate protrudes from said cavity plane, said method comprises: a step of forming the nitride semiconductor layer on the substrate; a first etching step of forming a first groove by etching at least the nitride semiconductor layer; and a second etching step of forming the cavity plane, in the second etching step, the inner wall of the first groove and part of the nitride semiconductor layer surface adjacent to the first groove are etched to form a second groove, and form the upper face of the protruding part.

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