Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2011-06-21
2011-06-21
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S606000, C438S796000, C438S718000, C257SE21097, C257SE21157
Reexamination Certificate
active
07964424
ABSTRACT:
A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.
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Abe Shinji
Kanamoto Kyozo
Kawasaki Kazushige
Sakuma Hitoshi
Shiozawa Katsuomi
Everhart Caridad M
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
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