Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-02-21
2009-02-10
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S457000, C438S458000, C438S761000, C438S768000, C257S190000, C257S633000, C257SE21222
Reexamination Certificate
active
07488667
ABSTRACT:
A principal surface at one side of a support substrate has thereon an adjustment layer made of material having a higher thermal expansion coefficient than that of the support substrate. Then, a nitride-base semiconductor element layer and the support substrate on a growth substrate are joined via an adhesion layer. Next, the support substrate is joined to the nitride-base semiconductor element layer via the adhesion layer. Next, the growth substrate is separated from the joined nitride-base semiconductor element layer and the support substrate.
REFERENCES:
patent: 6756285 (2004-06-01), Moriceau et al.
patent: 2002/0031862 (2002-03-01), Ohsawa et al.
patent: 2003/0223138 (2003-12-01), Akiyama
patent: 2004/0014297 (2004-01-01), Wu et al.
patent: 2004/0113270 (2004-06-01), Hedler et al.
patent: 2005/0076830 (2005-04-01), Motoki et al.
patent: 2005/0215010 (2005-09-01), Henninger et al.
patent: 2005/0227453 (2005-10-01), Miki et al.
patent: 2005/0282306 (2005-12-01), Yamanaka
patent: 2006/0022592 (2006-02-01), Boroson
patent: 2006/0028773 (2006-02-01), Shimazawa et al.
patent: 2007/0128830 (2007-06-01), Xie
patent: 2000-101139 (2000-04-01), None
patent: 2004-266240 (2004-09-01), None
Kunoh Yasumitsu
Takeuchi Kunio
Lee Jae
Mots Law PLLC
Motsenbocker Marvin A.
Sanyo Electric Co,. Ltd.
Toledo Fernando L
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